BU807FI View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

Manufacturer

BU807FI

Silicon NPN Darlington Power Transistor

New Jersey Semiconductor 

Silicon NPN Darlington Power Transistor

ELECTRICAL CHARACTERISTICS

Tc=25"C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 100mA ;IB=0

VcE(sat) Collector-Emitter Saturation Voltage lc= 5A; IB= 50mA

VeE(sat) Base-Emitter Saturation Voltage

lc= 5A; IB= 50mA

ICES

Collector Cutoff Current

VCE= 330V; VBE= 0

ICEV

Collector Cutoff Current

IESO

Emitter Cutoff Current

VCE= 330V; VBE(off)= 6V

VEB= 6V; lc= 0

VECF

C-E Diode Forward Voltage

IF=4A

BU807FI

MIN TYP. MAX UNIT

150

V

1.5

V

2.4

V

0.1 mA

0.1 mA

3.0 mA

2.0

V

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