DBD10G-E View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
DBD10G-E Datasheet PDF : 5 Pages
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DBD10G
1.0A Single-Phase Bridge Rectifier
Features
Plastic molded structure
Peak reverse voltage: VRM=600V
Average output current : IO=1.0A
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C (Note 1)
Parameter
Symbol
Value
Unit
Peak Reverse Voltage
Average Output Current
Ta = 25°C
Surge Forward Current
50Hz sine wave, 1cycle
Junction Temperature
VRM
IO
IFSM
Tj
600
V
1.0
A
30
A
150 C
Storage Temperature
Tstg
40 to 150 C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
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www.onsemi.com
ELECTRICAL CONNECTION
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MARKING
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1 : Lot No.
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet
© Semiconductor Components Industries, LLC, 2016
1
February 2016 - Rev. 1
Publication Order Number :
DBD10G/D
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