DTC123E View Datasheet(PDF) - ROHM Semiconductor

Part Name

Description

Manufacturer

DTC123E

NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)

ROHM Semiconductor 

DTC123E series

　

lAbsolute maximum ratings (Ta = 25°C)

Parameter

Supply voltage

Input voltage

Output current

Collector current

DTC123EM

Power dissipation

DTC123EE

DTC123EUA

DTC123EKA

Junction temperature

Range of storage temperature

　 　 　 　 　 　 　 　 Datasheet

Symbol

Values

Unit

VCC

50

V

VIN

-10 to 12

V

IO

100

mA

IC(MAX)*1

100

mA

150

150

PD*2

mW

200

200

Tj

150

℃

Tstg

-55 to +150

℃

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Input voltage

Output voltage

Input current

Output current

DC current gain

Input resistance

Resistance ratio

Transition frequency

VI(off)

VI(on)

VO(on)

II

IO(off)

GI

R1

R2/R1

VCC = 5V, IO = 100μA

VO = 0.3V, IO = 20mA

IO = 10mA, II = 0.5mA

VI = 5V

VCC = 50V, VI = 0V

VO = 5V, IO = 20mA

-

-

f

*1

T

VCE = 10V, IE = -5mA,

f = 100MHz

*1 Characteristics of built-in transistor

*2 Each terminal mounted on a reference land.

Values

Unit

Min. Typ. Max.

-

- 0.5

V

3.0 -

-

- 100 300 mV

-

- 3.8 mA

-

- 500 nA

20 -

-

-

1.54 2.2 2.86 kΩ

0.8 1.0 1.2 -

- 250 - MHz

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　

　

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