HYB39S256400T-10 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

HYB39S256400T-10

256 MBit Synchronous DRAM

Infineon Technologies 

HYB 39S256400/800/160T

256 MBit Synchronous DRAM

22. Precharge Termination of a Burst

22.1. CAS Latency = 2

Burst Length = 8 or Full Page, CAS Latency = 2

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22

CLK

t CK2

CKE High

CS

RAS

CAS

WE

BS

AP

RAx

RAy

RAz

Addr. RAx

CAx

DQM

RAy

CAy

RAz

CAz

t RP

t RP

t RP

Hi Z

DQ

DAx0 DAx1 DAx2 DAx3

Ay0 Ay1 Ay2

Az0 Az1 Az2

Activate

Command

Bank A

Write

Command

Bank A

Precharge

Command

Bank A

Precharge Termination

of a Write Burst.

Write Data is masked.

Activate

Command

Bank A

Read

Command

Bank A

Precharge

Command

Bank A

Activate

Command

Bank A

Read

Command

Bank A

Precharge

Command

Bank A

Precharge Termination

of a Read Burst.

SPT03933

Semiconductor Group

56

1998-10-01

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