2SC3867 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

Manufacturer

2SC3867

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC3867

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

20

V

11

V

3

V

50

mA

150

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ Max Unit Test conditions

Collector to base breakdown

V(BR)CBO

20

—

—

V

voltage

IC = 10 µA, IE = 0

Collector to emitter breakdown V(BR)CEO 11

—

—

V

voltage

IC = 1 mA, RBE = ∞

Emitter to base breakdown

voltage

V(BR)EBO

3

—

—

V

IE = 10 µA, IC = 0

Collector cutoff current

I CBO

—

—

0.5 µA

VCB = 15 V, IE = 0

Collector to emitter saturation VCE(sat) —

—

0.7 V

voltage

IC = 10 mA, IB = 5 mA

DC current transfer ratio

hFE

Gain bandwidth product

fT

Collector output capacitance Cob

Conversion gain

CG

45

—

200

VCE = 10 V, IC = 5 mA

2.5

3.8

—

GHz VCE = 10 V, IC = 10 mA

—

0.8 1.5 pF

VCB = 10 V, IE = 0, f = 1 MHz

10

14

—

dB

VCC = 10 V, IC = 1 mA,

f = 900 MHz,

Noise figure

Note: Marking is “DI–”

NF

—

10

14

dB

fosc = 930 MHz, (–5dBm),

fout = 30 MHz

2

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