MBR7030WT View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
MBR7030WT Datasheet PDF : 2 Pages
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Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR7030WT
FEATURES
·Low Forward Voltage
·Guard -Ring for Stress Protection
·High Surge Capability
·Pb-Free Package is Available
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·Lead Temperature for Soldering Purposes: 260℃ Max.
for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
30
V
IF(AV)
Average Rectified Forward Current
(Rated VR) TC= 125℃ Per Diode
Per Device
35
70
A
Nonrepetitive Peak Surge Current
IFSM
8.3ms single half sine-wave superimposed 500
A
on rated load conditions
IRRM
Peak Repetitive Reverse Surge Current
(20μs, 1.0kHz)
2.0
A
TJ
Junction Temperature
-55~150 ℃
Tstg
Storage Temperature Range
-55~150 ℃
dv/dt Voltage Rate of Change (Rated VR)
10,000 V/μs
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