ELECTRICAL CHARACTERISTICS (continued) (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
BRAKE CIRCUIT
Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V)
IGES
–
Collector-Emitter Leakage Current (VCE = 600 V, VGE = 0 V)
ICES
TJ = 25°C
–
TJ = 125°C
–
Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA)
VGE(th)
4.0
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0)
V(BR)CES
600
Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 20 A)
VCE(SAT)
–
Input Capacitance (VGE = 0 V, VCE = 25 V, f = 1.0 MHz)
Cies
–
Input Gate Charge (VCE = 300 V, IC = 20 A, VGE = 15 V)
Fall Time – Inductive Load
(VCE = 300 V, IC = 20 A, VGE = 15 V, RG = 150 Ω)
QT
–
tfi
–
Turn-On Energy
(VCE = 300 V, IC = 20 A, VGE = 15 V, RG = 150 Ω)
E(on)
–
Turn-Off Energy
(VCE = 300 V, IC = 20 A, VGE = 15 V, RG = 150 Ω)
E(off)
–
Diode Forward Voltage (IF = 20 A)
VF
–
Diode Reverse Leakage Current
Thermal Resistance – IGBT
Thermal Resistance – Diode
IR
–
RθJC
–
RθJC
–
Typ
–
–
–
6.0
700
2.5
4400
145
250
–
–
1.3
–
–
–
Max
Unit
± 20
µA
100
µA
2.0
mA
8.0
V
–
V
3.5
V
–
pF
–
nC
500
ns
2.5
mJ
2.5
mJ
2.0
V
50
µA
1.5
°C/W
2.9
°C/W
MOTOROLA
MHPM7B20A60A
3