MJF45H11 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

Manufacturer

MJF45H11

Silicon PNP Power Transistors

New Jersey Semiconductor 

Silicon PNP Power Transistors

MJF45H11

ELECTRICAL CHARACTERISTICS

TC=25'C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP MAX UNIT

Vceo(sus) Collector-Emitter Sustaining Voltage lc= -30mA; IB= 0

-80

V

VcE(sat) Collector-Emitter Saturation Voltage lc= -8A;IB= -0.4 A

VeE(sat) Base-Emitter Saturation Voltage

lc=-8A; IB=-0.8A

ICES

Collector Cutoff Current

VCE=Rated VCEO;

-1.0

V

-1.5 V

-1.0 u A

IEBO

Emitter Cutoff Current

VEB= -5V; lc= 0

-10 uA

hpE-i

DC Current Gain

lc= -2A; VCE= -1V

60

hFE-2

DC Current Gain

lc= -4A; VCE= -1V

40

COB

Output Capacitance

VCB=-10V, f= 0.1 MHz

230

pF

fr

Current-Gain—Bandwidth Product

lc=-0.5A; VCE=-10V; ftest=20MHz

40

MHz

Switching Times

ton

Turn-On Time

ts

Storage Time

tf

Fall Time

lc= -5A; lBi= -0.5A

135

ns

500

ns

100

ns

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