SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
MJF45H11
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=-30mA IB=0,
VCE(sat) Collector-emitter saturation voltage IC=-8A; IB=-0.4A
VBE(sat) Base-emitter saturation voltage
IC=-8A ;IB=-0.8A
ICES
Collector cut-off current
VCE=RatedBVCEO; VBE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-2A ; VCE=-1V
hFE-2
DC current gain
IC=-4A ; VCE=-1V
fT
Transition frequency
IC=-0.5A ; VCE=-10V,f=20MHz
Ccb
Collector capacitance
f=1MHz ; VCB=-10V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-5A IB1=- IB2=-0.5A
MIN TYP. MAX UNIT
-80
V
-1.0
V
-1.5
V
-10
µA
-10
µA
60
40
40
MHz
230
pF
0.3
µs
0.5
µs
0.14
µs
2