MK22FN128VDC10 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
MK22FN128VDC10
NXP Semiconductors.
MK22FN128VDC10 Datasheet PDF : 74 Pages
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General
Table 2. VDD supply LVD and POR operating requirements (continued)
Symbol Description
Low-voltage warning thresholds — high range
VLVW1H
VLVW2H
VLVW3H
VLVW4H
• Level 1 falling (LVWV=00)
• Level 2 falling (LVWV=01)
• Level 3 falling (LVWV=10)
• Level 4 falling (LVWV=11)
Min.
2.62
2.72
2.82
2.92
Typ.
2.70
2.80
2.90
3.00
Max.
2.78
2.88
2.98
3.08
Unit
Notes
1
V
V
V
V
VHYSH Low-voltage inhibit reset/recover hysteresis —
—
80
—
mV
high range
VLVDL Falling low-voltage detect threshold — low
range (LVDV=00)
1.54
1.60
1.66
V
Low-voltage warning thresholds — low range
1
VLVW1L
VLVW2L
VLVW3L
VLVW4L
• Level 1 falling (LVWV=00)
• Level 2 falling (LVWV=01)
• Level 3 falling (LVWV=10)
• Level 4 falling (LVWV=11)
1.74
1.80
1.86
V
1.84
1.90
1.96
V
1.94
2.00
2.06
V
2.04
2.10
2.16
V
VHYSL Low-voltage inhibit reset/recover hysteresis —
—
60
—
mV
low range
VBG Bandgap voltage reference
0.97
1.00
1.03
V
tLPO Internal low power oscillator period — factory
900
1000
1100
μs
trimmed
1. Rising threshold is the sum of falling threshold and hysteresis voltage
Table 3. VBAT power operating requirements
Symbol Description
VPOR_VBAT Falling VBAT supply POR detect voltage
Min.
0.8
Typ.
1.1
Max.
1.5
Unit
Notes
V
2.2.3 Voltage and current operating behaviors
Table 4. Voltage and current operating behaviors
Symbol Description
Min.
Typ.
Max.
Unit
VOH Output high voltage — Normal drive pad except
RESET_B
2.7 V ≤ VDD ≤ 3.6 V, IOH = -5 mA
VDD – 0.5
—
—
V
1.71 V ≤ VDD ≤ 2.7 V, IOH = -2.5 mA
VDD – 0.5
—
—
V
VOH Output high voltage — High drive pad except
RESET_B
2.7 V ≤ VDD ≤ 3.6 V, IOH = -20 mA
VDD – 0.5
—
—
V
Table continues on the next page...
Notes
1
1
8
NXP Semiconductors
Kinetis K22F 128KB Flash, Rev. 7, 08/2016
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