PBSS5140U View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PBSS5140U Datasheet PDF : 9 Pages
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NXP Semiconductors
40 V low VCEsat PNP transistor
Product data sheet
PBSS5140U
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector-base cut-off current
ICEO
collector-emitter cut-off current
IEBO
emitter-base cut-off current
hFE
DC current gain
VCEsat
saturation voltage
RCEsat
VBEsat
VBEon
fT
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
Cc
collector capacitance
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
CONDITIONS
VCB = −40 V; IC = 0
VCB = −40 V; IC = 0; Tamb = 150 °C
VCE = −30 V; IB = 0
VEB = −5 V; IC = 0
VCE = −5 V; IC = −1 mA
VCE = −5 V; IC = −100 mA
VCE = −5 V; IC = −500 mA
VCE = −5 V; IC = −1 A
IC = −100 mA; IB = −1 mA
IC = −500 mA; IB = −50 mA
IC = −1 A; IB = −100 mA
IC = −500 mA; IB = −50 mA; note 1
IC = −1 A; IB = −50 mA
VCE = −5 V; IC = −1 A
IC = −50 mA; VCE = −10 V;
f = 100 MHz
VCB = −10 V; IE = Ie = 0; f = 1 MHz
MIN.
−
−
−
−
300
300
250
160
−
−
−
−
−
−
150
−
TYP.
−
−
−
−
−
−
−
−
−
−
−
300
−
−
−
−
MAX.
−100
−50
−100
−100
−
800
−
−
−200
−250
−500
<500
−1.1
−1
−
12
UNIT
nA
μA
nA
nA
mV
mV
mV
mΩ
V
V
MHz
pF
2001 Jul 20
4
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