2SB653 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

Manufacturer

2SB653

Silicon PNP Power Transistors

New Jersey Semiconductor 

Silicon PNP Power Transistors

2SB653

ELECTRICAL CHARACTERISTICS

Tj=25'C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage lc= -50mA; RBE= °°

VjBRJEBO Emitter-Base Breakdown Voltage

IE= -5mA; lc= 0

VcE(sat) Collector-Emitter Saturation Voltage lc= -5A; IB= -0.5A

VeE(on) Base-Emitter On Voltage

|c= -1A; VCE= -5V

ICBO

Collector Cutoff Current

VCB=-100V; IE=0

hpE-1 DC Current Gain

lc= -1A; VCE= -5V

hFE-2

DC Current Gain

fl

Current-Gain—Bandwidth Product

tf

Fall Time

lc= -5A; VCE= -5V

lc= -1A; VCE= -5V

lc= -0.6A; IB1= -0.6A; IB2= 0

MIN TYP. MAX UNIT

-100

V

-5

V

-3.0

V

-1.5

V

-0.1

mA

60

200

20

22

MHz

0.5

us

Classifications

B

C

60-120 100-200

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