2SB1468 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SB1468

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

2SB1468

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞

V(BR)CBO Collector-Base Breakdown Voltage

IC= -1mA; IE= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -1mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.25A

ICBO

Collector Cutoff Current

VCB= -40V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -4V; IC= 0

hFE-1

DC Current Gain

IC= -1A; VCE= -2V

hFE-2

DC Current Gain

IC= -6A; VCE= -2V

Switching Times

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

VCC= -10V, RL= 2Ω,

IC= -5A;IB1= -IB2= -0.5A,

MIN TYP. MAX UNIT

-30

V

-60

V

-6

V

-0.5 V

-100 μA

-100 μA

70

280

30

0.1

μs

0.3

μs

0.03

μs

 hFE-1 Classifications

Q

R

S

70-140 100-200 140-280

isc website：www.iscsemi.com

2 isc & iscsemi is registered trademark

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