2SB1343 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SB1343 Datasheet PDF : 2 Pages
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Silicon PNP Darlington Power Transistor
2SB1343
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage '" lc=-10mA; IB= 0
-100
V
V(BR)CBO Collector-Base Breakdown Voltage
lc= -50u A; !E= 0
-100
V
VcE(sat) Collector-Emitter Saturation Voltage lc= -3A; IB- -6mA
ICBO
Collector Cutoff Current
VCB=-100V; IE=0
-1.5
V
-10
MA
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
-3
mA
hFE
DC Current Gain
lc= -2A ; VCE= -3V .
1000
20000
COB
Output Capacitance
!E= 0; VCB= -10V; ftesi= 1MHz
90
PF
fy
Current-Gain—Bandwidth Product
IE=0,5A;VCE= -5V; f,est= 10MHz
12
MHz
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