2SB776 View Datasheet(PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

Part Name

Description

Manufacturer

2SB776

Silicon PNP transistor in a TO-126F Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SB776

Rev.E Mar.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Peak Collector Current – Continuous

Base Current - Continuous

Collector Power Dissipation

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

ICM

IB

PC (Tc=25℃)

PC

Tj

Tstg

DATA SHEET

数值

Rating

-50

-50

-5.0

-3.0

-7.0

-0.6

10

1.0

150

-55～150

单位

Unit

V

V

V

A

A

A

W

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Base Breakdown

Voltage

Collector to Emitter Breakdown

Voltage

Emitter to Base Breakdown

Voltage

符号

Symbol

VCBO

VCEO

VEBO

Collector Cut-Off Current

ICBO

Emitter Cut-Off Current

IEBO

DC Current Gain

Collector to Emitter Saturation

Voltage

hFE(1)

hFE(2)

VCE(sat)

Base to Emitter Saturation Voltage VBE(sat)

Transition Frequency

fT

Reverse Transfer Capacitance

COb

测试条件

Test Conditions

IC=-100μA IE=0

最小值 典型值 最大值 单位

Min Typ Max Unit

-50

V

IC=-5mA IB=0

-50

V

IE=-100μA IC=0

-5.0

V

VCB=-50V IE=0

VEB=-3.0V IC=0

VCE=-2.0V IC=-1.0A

100

VCE=-2.0V IC=-20mA 100

-1.0 μA

-1.0 μA

400

IC=-2.0A IB=-200mA

-0.5 V

IC=-2.0A

VCE=-5.0V

VCB=-10V

fT=1.0MHz

IB=-200mA

IC=-100mA

IE=0

-2.0 V

80

MHz

45

pF

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