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Part Name
Description
2SD2131 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SD2131
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
Toshiba
2SD2131 Datasheet PDF : 5 Pages
1
2
3
4
5
I
C
– V
CE
5
3
Common
8
2
emitter
Tc = 25°C
1.5
6
1
0.7
4
0.5
IB = 0.3 mA
2
0
0
0
2
4
6
8
10
Collector-emitter voltage V
CE
(V)
30000
10000
5000
3000
1000
500
h
FE
– I
C
Common emitter
VCE = 3 V
Tc = 100°C
25
−
55
200
0.05 0.1
0.3 0.5 1
3 5 10 20
Collector current I
C
(A)
2SD2131
I
C
– V
BE
8
6
4
2
Tc = 100°C
−
55
Common emitter
25
VCE = 3 V
0
0
0.8
1.6
2.4
3.2
4.0
Base-emitter voltage V
BE
(V)
V
CE
– I
B
2.4
2.0
IC = 8 A
1.6
5
1.2
3
1
0.8
0.1
0.4
0
0.1
0.3 0.5 1
3 5 10
Common emitter
Tc = 25°C
30 50 100 300
Base current I
B
(mA)
V
CE (sat)
– I
C
10
Common emitter
5
IC/IB = 250
3
1
25
0.5
Tc =
−
55°C
100
0.3
0.1
0.3 0.5
1
35
10
Collector current I
C
(A)
V
BE (sat)
– I
C
10
Common emitter
5
IC/IB = 250
3
Tc =
−
55°C
25
1
100
0.5
0.3
0.1
0.3 0.5
1
35
10
Collector current I
C
(A)
3
2006-11-21
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