G41H View Datasheet(PDF) - BCD Semiconductor
Part Name
Description
Manufacturer
G41H Datasheet PDF : 19 Pages
| |||
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115
Electrical Characteristics (Continued)
AP2115-3.3 Electrical Characteristics (Note 2)
VIN=4.3V, CIN=4.7µF (Ceramic), COUT=4.7µF (Ceramic), Typical TA=25°C, Bold typeface applies over -40OC≤TJ≤85OC
ranges, unless otherwise specified (Note 3).
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Output Voltage
VOUT
VIN =4.3V, 1mA ≤ IOUT ≤ 30mA
Maximum Output Current
Load Regulation
Line Regulation
Dropout Voltage
IOUT(MAX)
△VOUT/VOUT
△IOUT
△VOUT/VOUT
△VIN
VDROP
Quiescent Current
IQ
Power Supply Rejection
Ratio
PSRR
Output Voltage
Temperature Coefficient
△VOUT/VOUT
△T
Short Current Limit
ISHORT
RMS Output Noise
VNOISE
VEN High Voltage
VIH
VEN Low Voltage
VIL
Standby Current
ISTD
Start-up Time
EN Pull Down Resistor
VOUT Discharge Resistor
Thermal
Temperature
Thermal
Hysteresis
Shutdown
Shutdown
tS
RPD
RDCHG
TOTSD
THYOTSD
Thermal Resistance
θJC
VIN =4.3V, VOUT=3.25V to 3.35V
VIN=4.3V, 1mA ≤ IOUT ≤1A
4.3V≤VIN≤6V, IOUT=30mA
IOUT=1A
VIN=4.3V, IOUT=0mA
Ripple 1Vp-p
VIN=4.3V,
IOUT=100mA
f=100Hz
f=1KHz
IOUT=30mA
VOUT=0V
10Hz ≤ f ≤100kHz (No load)
Enable logic high, regulator on
Enable logic low, regulator off
VIN=3.5V, VEN in OFF mode
No Load
Set EN pin at Low
SOIC-8
SOT-89-5
98.5%
×VOUT
3.3 101.5%
×VOUT
V
1
A
0.2
1 %/A
-0.1 0.02 0.1 %/V
450 750 mV
65 90 µA
65
dB
65
±30
ppm/°C
50
mA
30
µVRMS
1.5
V
0.4
0.01 1.0 µA
20
µs
3.0
MΩ
60
Ω
160
°C
25
74.6
°C/W
47
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Jul. 2011 Rev 1. 1
BCD Semiconductor Manufacturing Limited
9
Share Link: 