BYT28B-400-E3/45 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
BYT28B-400-E3/45 Datasheet PDF : 5 Pages
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BYT28-x00, BYT28F-x00, BYT28B-x00, UG10xCT, UGF10xCT, UGB10xCT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
15
Resistive or Inductive Load
10
5
1000
100
10
1.0
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
0
0
50
100
150
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
0.1
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
100
TC = 105 °C
8.3 ms Single Half Sine-Wave
10
1
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
100
Pulse Width = 300 μs
1 % Duty Cycle
10
1.0
TJ = 125 °C
TJ = 100 °C
0.1
TJ = 25 °C
0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
120
100
at 5 A, 50 A/μs
80
at 2 A, 20 A/μs
60
at 5 A, 50 A/μs
at 1 A, 100 A/μs
40
20
0
25
at 2 A, 20 A/μs
50
75
100
Junction Temperature (°C)
trr
Qrr
125
Fig. 5 - Reverse Switching Characteristics Per Diode
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
0.1
1
10
100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance Per Diode
Revision: 05-Jun-2019
3
Document Number: 88552
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