AOB414(2012) View Datasheet(PDF) - Alpha and Omega Semiconductor
Part Name
Description
Manufacturer
AOB414 Datasheet PDF : 7 Pages
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AOB414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
300
15
di/dt=800A/µs
125ºC
250
12
200
Irm
9
25ºC
150
125ºC
6
100
Qrr
50
3
25ºC
0
0
5
10 15 20 25 30
-RoHS
CFiogmurpel1ia7n: tDiode
IS (A)
Reverse Recovery
Charge
and
Peak
-Halogen Free Current vs. Conduction Current
150
30
Is=20A
125ºC
26
120
22
90
60
Qrr
30
Irm
18
25ºC
14
125ºC
10
25ºC
6
2
0
-2
0
200 400 600 800 1000
di/dt (A/µs)
Figure 19: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
24
2
125ºC
20
di/dt=800A/µs
1.6
16
12
trr
1.2
25ºC
8
S
4
0.8
125ºC
0.4
25ºC
0
0
0
5
10
15
20
25
30
IS (A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
30
5
Is=20A
4.5
25
125ºC
4
20
25ºC
15
3.5
trr
3
2.5
2
10
125ºC
1.5
25ºC
5
1
S
0.5
0
0
0
200
400
600
800 1000
di/dt (A/µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Rev 1: May 2012
www.aosmd.com
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