BAS85-M-08(2017) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
BAS85-M-08 Datasheet PDF : 4 Pages
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www.vishay.com
BAS85-M
Vishay Semiconductors
Small Signal Schottky Diode
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
MECHANICAL DATA
Case: MiniMELF (SOD-80)
Weight: approx. 31 mg
Cathode band color: black
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/2.5K per 7" reel (8 mm tape), 12.5K/box
FEATURES
• For general purpose applications
• This diode features low turn-on voltage
• The devices are protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges
• AEC-Q101 qualified
• Material categorization: for definitions of
compliance
please
see
www.vishay.com/doc?99912
APPLICATIONS
• Applications where a very low forward voltage is required
PARTS TABLE
PART
BAS85-M
ORDERING CODE
BAS85-M-18 or BAS85-M-08
CIRCUIT CONFIGURATION
Single
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Continuous reverse voltage
Forward continuous current (1)
Peak forward current (1)
Surge forward current (1)
Power dissipation (1)
tp < 1 s
Tamb = 65 °C
VR
IF
IFM
IFSM
Ptot
Note
(1) Valid provided that electrodes are kept at ambient temperature.
VALUE
30
200
300
600
200
UNIT
V
mA
mA
mA
mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air (1)
Junction temperature
Storage temperature range
RthJA
Tj
Tstg
Note
(1) Valid provided that electrodes are kept at ambient temperature.
VALUE
430
125
-55 to +150
UNIT
K/W
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Reverse breakdown voltage
Leakage current
Forward voltage
Diode capacitance
Reverse recovery time
IR = 10 μA (pulsed)
V(BR)
30
VR = 25 V
IR
Pulse test tp < 300 μs, IF = 0.1 mA
VF
Pulse test tp < 300 μs, IF = 1 mA
VF
Pulse test tp < 300 μs, IF = 10mA
VF
Pulse test tp < 300 μs, IF = 30 mA
VF
Pulse test tp < 300 μs, IF = 100 mA
VF
VR = 1 V, f = 1 MHz
CD
IF = 10 mA, IR = 10 mA, iR = 1 mA
trr
TYP.
0.2
500
MAX.
2
240
320
400
800
10
5
UNIT
V
μA
mV
mV
mV
mV
mV
pF
ns
Rev. 1.2, 02-Jun-17
1
Document Number: 83403
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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