BSR202N View Datasheet(PDF) - TY Semiconductor
Part Name
Description
Manufacturer
BSR202N Datasheet PDF : 3 Pages
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Product specification
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
BSR202N
min.
Values
typ.
Unit
max.
C iss
-
C oss
V GS=0 V, V DS=10 V,
f =1 MHz
-
Crss
-
t d(on)
-
tr
V DD=10 V, V GS=4.5 V,
-
t d(off)
I D=3.8 A, R G=6 Ω
-
tf
-
863 1147 pF
278
370
40
60
8.8
- ns
16.7
-
19
-
3.7
-
Q gs
-
1.66 2.21 nC
Q gd
V DD=10 V, I D=3.8 A,
-
Qg
V GS=0 to 4.5 V
-
1.1
1.6
5.8
8.8
V plateau
-
1.9
-V
IS
I S,pulse
T A=25 °C
V SD
V GS=0 V, I F=3.8 A,
T j=25 °C
t rr
V R=10 V, I F=3.8 A,
Q rr
di F/dt =100 A/µs
-
-
0.8 A
-
-
15.2
-
0.8
1.1 V
-
14.3
ns
-
7.6
- nC
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