CS51312GDR16 View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
CS51312GDR16 Datasheet PDF : 22 Pages
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CS51312
ELECTRICAL CHARACTERISTICS (continued) (0°C < TA < 70°C; 0°C < TJ < 125°C; 9.0 V < VCC1 < 14 V; 9.0 V ≤ VCC2 ≤ 20 V;
2.0 V DAC Code (VID4 = VID3 = VID2 = VID1 = 0, VID0 = 1.0) CGATE(H) = CGATE(L) = 3.3 nF, COFF = 390 pF; unless otherwise specified.)
Characteristic
Test Conditions
Min
Typ
Max
Unit
Voltage Identification DAC (continued)
Line Regulation
9.0 V ≤ VCC ≤ 14 V
Input Threshold
VID4, VID3, VID2, VID1, VID0
Input Pull−Up Resistance
VID4, VID3, VID2, VID1, VID0
Pull−Up Voltage
−
−
0.01
−
%/V
1.0
1.25
2.4
V
25
50
100
kΩ
5.48
5.65
5.82
V
Error Amplifier
VFB Bias Current
COMP Source Current
COMP Sink Current
Open Loop Gain
Unity Gain Bandwidth
PSRR @ 1.0 kHz
Transconductance
0.2 V ≤ VFB ≤ 3.5 V
VCOMP = 1.2 V to 3.6 V, VFB = 1.9 V
VCOMP = 1.2 V, VFB = 2.1 V
CCOMP = 0.1 μF
CCOMP = 0.1 μF
CCOMP = 0.1 μF
−
−7.0
0.1
7.0
μA
15
30
60
μA
30
60
120
μA
−
80
−
dB
−
50
−
kHz
−
70
−
dB
−
32
−
mmho
Output Impedance
−
−
0.5
−
MΩ
GATE(H) and GATE(L)
High Voltage at 100 mA
Low Voltage at 100 mA
Measure VCC1/2 − GATE(L)/(H)
Measure GATE(L)/(H)
−
1.2
2.1
V
−
1.0
1.5
V
Rise Time
Fall Time
GATE(H) to GATE(L) Delay
1.6 V < GATE(H)/(L) < (VCC1/2 − 2.5 V)
(VCC1/2 − 2.5 V) > GATE(L)/(H) > 1.6 V
GATE(H) < 2.0 V, GATE(L) > 2.0 V,
VCC1/2 = 12 V
−
40
80
ns
−
40
80
ns
30
65
110
ns
GATE(L) to GATE(H) Delay
GATE Pull−Down
GATE(L) < 2.0 V, GATE(H) > 2.0 V,
VCC1/2 = 12 V
Resistance to GND. Note 3
30
65
110
ns
20
50
115
kΩ
Overcurrent Protection
OVC Comparator Offset Voltage
Discharge Threshold Voltage
0 V ≤ VOUT ≤ 3.5 V
−
77
86
101
mV
0.2
0.25
0.3
V
VOUT Bias Current
OVC Latch Discharge Current
PWM Comparator
PWM Comparator Offset Voltage
Transient Response
COFF
Off−Time
0.2 V ≤ VOUT ≤ 3.5 V
VCOMP = 1.0 V
0 V ≤ VFB ≤ 3.5 V
VFB = 0 to 3.5 V
−
−7.0
0.1
7.0
μA
100
800
2500
μA
0.99
1.1
1.23
V
−
200
300
ns
1.0
1.6
2.3
μs
Charge Current
VCOFF = 1.5 V
Discharge Current
VCOFF = 1.5 V
3. Guaranteed by design, not 100% tested in production.
−
550
−
μA
−
25
−
mA
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