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SFH640
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
Forward current
Power dissipation
OUTPUT
VR
6
V
IF
60
mA
Pdiss
100
mW
Power dissipation
Collector emitter voltage
Collector base voltage
Emitter base voltage
Collector current
Power dissipation
COUPLER
Pdiss
150
VCEO
300
VCBO
300
VEBO
7
IC
50
Pdiss
150
mW
V
V
V
mA
mW
Storage temperature range
Operating temperature range
Soldering temperature
t = 10 s
Tstg
-55 to +125
°C
Tamb
-55 to +100
°C
Tsld
260
°C
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability
Axis Title
200
Phototransistor
150
100
IR Diode
50
10000
1000
100
0
10
0
20 40 60 80 100 120
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation vs. Ambient Temperature
Axis Title
70
10000
60
50
1000
40
30
100
20
10
0
10
0
20 40 60 80 100 120
Tamb - Ambient Temperature (°C)
Fig. 2 - Maximum Forward Current vs. Ambient Temperature
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
INPUT
Forward voltage
IF = 10 mA
VF
-
Reverse voltage
IR = 10 μA
VR
6
Reverse current
VR = 6 V
IR
-
Capacitance
VF = 0 V, f = 1 kHz
CI
-
OUTPUT
Collector emitter breakdown voltage
ICE = 1 mA, RBE = 1 M
BVCEO
300
Voltage emitter base
IEB = 10 μA
BVBEO
7
TYP.
1.2
-
0.01
30
-
-
MAX.
1.5
-
10
-
-
-
UNIT
V
V
μA
pF
V
V
Rev. 1.7, 18-Jun-2019
2
Document Number: 83682
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000