2N6532 View Datasheet(PDF) - Unspecified

Part Name

Description

Manufacturer

2N6532

Silicon NPN Darlington Power Transistor

Unspecified 

SPTECH Product Specification

SPTECH Silicon NPN Darlington Power Transistor

2N6532

DESCRIPTION

·High DC Current Gain-

: hFE= 1000(Min.)@IC= 5A

·Collector-Emitter Sustaining Voltage-

:VCEO(SUS)= 100V(Min.)

·Low Collector-Emitter Saturation Voltage-

: VCE(sat)= 2.0V(Max.)@ IC= 5A

APPLICATIONS

·Power switching

·Hammer drivers

·Series and shunt regulators

·Audio amplifiers

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VCBO

Collector-Base Voltage

VCER

Collector-Emitter Voltage RBE= 100Ω

VCEV

Collector-Emitter Voltage VBE= -1.5V

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current

ICM

Collector Current-peak

IB

Base Current

PC

Collector Power Dissipation

@TC=25℃

Tj

Junction Temperature

Tstg

Storage Temperature Range

VALUE UNIT

100

V

100

V

100

V

100

V

5

V

8

A

15

A

250

mA

65

W

150

℃

-65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance, Junction to Case

MAX

1.92

UNIT

℃/W

SPTECH website：www.superic-tech.com

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