2N6536 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2N6536 Datasheet PDF : 2 Pages
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Silicon NPN PowerTransistors
CHARACTERISTICS
Tj=25G unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-emitter sustaining voltage lc=0.2A ; IB=0
VcEsat-1 Collector-emitter saturation voltage lc=5A;lB=10mA
VcEsat-2 Collector-emitter saturation voltage lc=8A; lB=80mA
VBE-1
Base -emitter on voltage
lc=5A ; VcE=3V
VBE-2
Base -emitter on voltage
ICEV
Collector cut-off current
I ceo Collector cut-off current
lc=8A ; VCE=3V
VcE=100V;VBE=-1.5V
Tc=125L
Vce=100V; IB=0
IEBO
Emitter cut-off current
VEB=5V; lc=0
hpE-1
DC current gain
IC=5A ; VCE^SV
hFE-2
DC current gain
lc=8A ; VCE=3V
VF
Diode forward voltage
lF=8A
2N6536
MIN
TYP.
MAX
UNIT
100
V
2.0
V
3.0
V
2.8
V
4.5
V
0.5
5.0
mA
1.0
mA
5.0
mA
1000
10000
100
5000
5.0
V
11.94
12.700
sll
OJ
0.712-0.863 0
3.60-
i
-fs,-
CW
o>
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