2N6420 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

Manufacturer

2N6420

Silicon PNP Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.125A

VBE(on) Base-Emitter On Voltage

IC= -1A ; VCE= -10V

ICEO

Collector Cutoff Current

VCE= -150V; IB= 0

IEBO

Emitter Cutoff Current

VEB= -6V; IC= 0

hFE-1

DC Current Gain

IC= -0.1A ; VCE= -10V

hFE-2

DC Current Gain

IC= -0.5A ; VCE= -10V

hFE-3

DC Current Gain

IC= -1A ; VCE= -10V

2N6420

MIN MAX UNIT

-175

V

-5.0

V

-1.4

V

-10

mA

-5.0

mA

40

40

200

10

SPTECH website：www.superic-tech.com

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