IRFE110 View Datasheet(PDF) - Semelab - > TT Electronics plc
Part Name
Description
Manufacturer
IRFE110 Datasheet PDF : 2 Pages
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2N6782LCC4
IRFE110
MECHANICAL DATA
Dimensions in mm (inches)
N–CHANNEL
POWER MOSFET
1.27 (0.050)
1.07 (0.040)
11
7.62 (0.300) 10
7.12 (0.280)
9
8
9.14 (0.360)
8.64 (0.340)
12 13 14 15 16
1.39 (0.055)
1.02 (0.040)
17
18
1
2
0.76 (0.030)
0.51 (0.020)
76543
1.39 (0.055)
1.15 (0.045)
1.65 (0.065)
1.40 (0.055)
0.33
0.08
(0.013)
(0.003)
Rad.
0.43 (0.017)
0.18 (0.007 Rad.
≈ 2.16 (0.085)
GATE
DRAIN
SOURCE
LCC4
Pins 4,5
Pins1,2,15,16,17,18
Pins 6,7,8,9,10,11,12,13
VDSS
ID(cont)
RDS(on)
100V
3.5A
0.6Ω
FEATURES
• SURFACE MOUNT
• SMALL FOOTPRINT
• HERMETICALLY SEALED
• DYNAMIC dv/dt RATING
• AVALANCHE ENERGY RATING
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS
Gate – Source Voltage
±20V
ID
Continuous Drain Current
(VGS = 10V , Tcase = 25°C)
3.5A
ID
Continuous Drain Current
(VGS = 10V , Tcase = 100°C)
2.25A
IDM
Pulsed Drain Current 1
14A
PD
Power Dissipation @ Tcase = 25°C
15W
Linear Derating Factor
0.09W/°C
EAS
dv/dt
Single Pulse Avalanche Energy 2
Peak Diode Recovery 3
7.0mJ
9.0V/ns
TJ , Tstg
Operating and Storage Temperature Range
Surface Temperature ( for 5 sec).
-55 to +150°C
300°C
Notes
1) Pulse Test: Pulse Width ≤ 300μs, δ ≤ 2%
2) @ VDD = 25V , Peak IL = 3.1A , Starting TJ = 25°C
3) @ ISD ≤ 3.1A , di/dt ≤ 75A/μs , VDD ≤ BVDSS , TJ ≤ 150°C , Suggested RG = 7.5Ω
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5517
Issue 1
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