2N3791 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

Manufacturer

2N3791

Silicon PNP Power Transistors

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistors

DESCRIPTION

·DC Current Gain-

: hFE= 50-180@IC= -1A

·Wide Area of Safe Operation

·Complement to Type 2N3715/3716

APPLICATIONS

·Designed for medium-speed switching and amplifier

applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

2N3791

-60

VCBO

Collector-Base Voltage

V

2N3792

-80

2N3791

-60

VCEO

Collector-Emitter Voltage

V

2N3792

-80

VEBO

Emitter-Base Voltage

-7

V

IC

Collector Current-Continuous

-10

A

IB

Base Current

-4

A

PC

Collector Power Dissipation@TC=25℃

150

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX

1.17

UNIT

℃/W

2N3791/3792

SPTECH website：www.superic-tech.com

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