2N3791 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

Manufacturer

2N3791

Silicon PNP Power Transistors

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistors

2N3791/3792

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS)

Collector-Emitter

Sustaining Voltage

2N3791

2N3792

IC= -50mA ; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A

VBE(on)-1 Base-Emitter On Voltage

IC= -5A ; VCE= -2V

VBE(on)-2 Base-Emitter On Voltage

IC= -10A ; VCE= -4V

2N3791

VCE= -60V; VBE(off)= -1.5V

VCE= -60V; VBE(off)= -1.5V,TC=150℃

ICEX

Collector Cutoff Current

2N3792

VCE= -80V; VBE(off)= -1.5V

VCE= -80V; VBE(off)= -1.5V,TC=150℃

IEBO

Emitter Cutoff Current

VEB= -7V; IC=0

hFE-1

DC Current Gain

IC= -1A ; VCE= -2V

hFE-2

DC Current Gain

IC= -3A ; VCE= -2V

fT

Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -10V ;ftest= 1.0MHz

MIN MAX UNIT

-60

V

-80

-1.0

V

-1.8

-4.0

V

-1.0

-5.0

mA

-1.0

-5.0

-5.0

mA

50

150

30

4

MHz

SPTECH website：www.superic-tech.com

2

Share Link: