2N6107 View Datasheet(PDF) - Galaxy Semi-Conductor
Part Name
Description
Manufacturer
2N6107 Datasheet PDF : 5 Pages
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PNP Epitaxial Silicon Transistor
FEATURES
DC Curent Gain Specified to 7A.
Collector-Emitter Sustaining Voltage.
High Current Gain.
Pb
Lead-free
Production specification
2N6107
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
-80
V
VCEO
VEBO
IC
IB
PC
Tj,Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Continuous
Peak
Collector Dissipation
Junction and Storage Temperature
-70
V
-5
V
-7
A
-10
3
A
2
W
-65 to +150 ℃
X029
Rev.A
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