2N4273 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2N4273

Silicon NPN Power Transistor

Inchange Semiconductor 

isc Silicon NPN Power Transistor

INCHANGE Semiconductor

2N4273

DESCRIPTION

·Excellent Safe Operating Area

·Low Collector-Emitter Saturation Voltage

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device performance

and reliable operation.

APPLICATIONS

·Designed for switching regulator applications where high

frequency and high voltage swings and required

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

175

V

VCEO

Collector-Emitter Voltage

140

V

VEBO

Emitter-Base Voltage

9

V

IC

Collector Current-Continuous

2.5

A

PC

Collector Power Dissipation@TC=25℃

25

W

TJ

Junction Temperature

-65~200 ℃

Tstg

Storage Temperature

-65~200 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX UNIT

7.0

℃/W

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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