2N5605 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2N5605 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= -50mA ; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= -2.5A; IB= -0.25A
VsE(sat) Base-Emitter Saturation Voltage
lc= -2.5A; IB= -0.25A
ICEO
Collector Cutoff Current
VCE= -60V; IB= 0
ICBO
Collector Cutoff Current
VCB= -80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -6V; lc= 0 .
hFE
DC Current Gain
lc= -2.5A ; VCE= -5V
fr
Current-Gain—Bandwidth Product lc=-0.5A;VCE=-10V
2N5605
MIN MAX UNIT
-60
V
-0.75
V
-1.45
V
-1.0
mA
-0.1
mA
-0.1
rnA
70
200
60
MHz
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