2N5597 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2N5597 Datasheet PDF : 2 Pages
| |||
^s-tni-donduatoi ^Pioducti, Otic.
20 STERN AVE,
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistors
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N5597
DESCRIPTION
• DC Current Gain-
: hFE= 70-200@lc= -1A
• Wide Area of Safe Operation
• Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -60V(Min)
• Complement to Type 2N5598
APPLICATIONS
• Designed for use in high frequency power amplifiers, audio
power amplifier and drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-60
V
•VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-2
A
PC
Collector Power Dissipation@Tc=25°C
20
W
Tj
Junction Temperature
150
•c
Tstg
Storage Temperature
-65-150 'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance.Junction to Case
MAX UNIT
4.37 r/w
•-<
2
PIN 1.BASE
1. EMITTER
3. COLLECT OR (CASE)
TO-66 package
, F 1 i • -A
r-N-*j
L —l
\l c
t-E
1
:
*IU— D 2 PL
X
t l AOS
j. "\^/ 1
f& ^r 1 £•-
t
V
iB
9
C
1
nun
DIM MIN MAX
A 31.40 31,30
B 17^0 17,70
C 6.70 7.10
D 0.70 0.90
£ 1.40 1.60
6
5.03
H
2,54
K 9.80 10.20
L 14.70 14.90
N 12.40 12.60
Q 3.60 3.30
U 24.30 24.50
V 3.50 3.70
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
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