2N5599 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

Manufacturer

2N5599

Silicon PNP Power Transistors

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistors

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A

VBE(on) Base-Emitter On Voltage

IC= -1A ; VCE= -5V

ICEO

Collector Cutoff Current

VCE= -80V; IB= 0

ICBO

Collector Cutoff Current

VCB= -100V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC=0

hFE

DC Current Gain

IC= -1A ; VCE= -5V

fT

Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -10V

2N5599

MIN MAX UNIT

-80

V

-1.0

V

-1.5

V

-1.0

mA

-0.1

mA

-0.1

mA

30

90

50

MHz

SPTECH website：www.superic-tech.com

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