2N5600 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2N5600 Datasheet PDF : 2 Pages
| |||
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
Silicon PNP Power Transistors
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N4907
DESCRIPTION
• Low Collector Saturation Voltage-
: VcE(satr -0.75V(Max.)@ lc= -4A
• DC Current Gain-
: hFE= 20-80 @lc= -4A
APPLICATIONS
• Designed for general purpose use in power amplifier and
switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-40
V
VCEO Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-10
A
IB
Base Current-Continuous
-4
A
PC
Collector Power Dissipation@Tc=25°C
150
W
Tj
Junction Temperature
200
gc
Tstg
Storage Temperature
-65-200 'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
2.0 "C/W
\ v. J ^\X4|fe5»; j* /
3
•^
2
PIN 1.BASE
2. EMITTER
3. COLLECT OR (CASE)
TQ-3 package
•*1
u i -J
1
1t
:C
J
-JU- D 2 PL
— *•
V-
L-*- /~
t
JK/^,rtT\
-•$
i
;
C
VvJ^./
''
t
e
I
3
nun
DIM IVm tux
A
3900
B 25.30 26.67
C
? .80 8.30
0
0 90 1 10
E
t 40 1.60
G
1092
H
S4S
K 11M 13.50
L 16 .75 17.05
M 19 .40 19.62
Q
4 .00 420
U 3t 00 30 20
V
4 30 4.50
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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