2N6374 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
Manufacturer
2N6374 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
2N6374
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
40
V
VCER
Collector-Emitter Sustaining Voltage IC= 100mA; RBE= 100Ω
45
V
VCEV
Collector-Emitter Sustaining Voltage IC= 100mA; VBE= 1.5V
50
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
1.0
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A
2.0
V
VBE(on) Base-Emitter On Voltage
ICEV
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 3A ; VCE= 4V
VCE= 45V;VBE(off)= 1.5V
VCE= 45V;VBE(off)= 1.5V;TC=150℃
VCE= 25V; IB= 0
2.0
V
0.1
2.0
mA
1.0 mA
ICER
Collector Cutoff Current
VCE= 35V; RBE= 100Ω
0.1 mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
0.1 mA
hFE-1
DC Current Gain
IC= 3A ; VCE= 4V
20
100
hFE-2
DC Current Gain
IC= 6A ; VCE= 4V
5
fT
Current-Gain—Bandwidth Product IC= 1.0A; VCE= 4V, ftest= 1MHz
5
MHz
SPTECH website：www.superic-tech.com
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