MBR12020CT View Datasheet(PDF) - Naina Semiconductor ltd.
Part Name
Description
Manufacturer
MBR12020CT Datasheet PDF : 2 Pages
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Naina Semiconductor Ltd.
MBR12020CT thru
MBR12040CTR
Features
Silicon Schottky Diode, 120A
• Guard Ring Protection
• Low forward voltage drop
• High surge current capability
• Up to 100V VRRM
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR12020CT
(R)
Repetitive peak
reverse voltage
VRRM
20
RMS reverse voltage VRMS
14
DC blocking voltage VDC
20
Average forward
current
IF(AV)
TC ≤ 140 oC
120
Non-repetitive
forward surge
current, half sine-
IFSM
TC = 25 oC
tp = 8.3 ms
800
wave
MBR12030CT
(R)
30
21
30
120
800
MBR12035CT
(R)
35
25
35
120
800
MBR12040CT
(R)
40
28
40
120
800
Units
V
V
V
A
A
Electrical Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR12020CT
(R)
DC forward voltage
VF
IF = 60 A
TJ = 25 oC
0.68
VR = 20 V
DC reverse current
IR
TJ = 25 oC
VR = 20 V
TJ = 125oC
3
200
MBR12030CT
(R)
0.68
3
200
MBR12035CT
(R)
0.68
3
200
MBR12040CT
(R)
0.68
3
200
Units
V
mA
Thermal Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
MBR12020CT
(R)
Thermal resistance
junction to case
RthJ-C
0.8
Operating, storage
temperature range
TJ , Tstg
- 40 to +175
MBR12030CT
(R)
0.8
- 40 to +175
MBR12035CT
(R)
0.8
- 40 to +175
MBR12040CT
(R)
0.8
- 40 to +175
Units
oC/W
oC
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com
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