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Part Name
Description
BCR191W(2004) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
BCR191W
(Rev.:2004)
PNP Silicon Digital Transistor
Infineon Technologies
BCR191W Datasheet PDF : 10 Pages
1
2
3
4
5
6
7
8
9
10
BCR191.../SEMB1
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR191,
T
S
≤
102°C
BCR191F,
T
S
≤
128°C
BCR191L3,
T
S
≤
135°C
BCR191S,
T
S
≤
115°C
BCR191T,
T
S
≤
109°C
BCR191W,
T
S
≤
124°C
SEMB1,
T
S
≤
75°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
BCR191
BCR191F
BCR191L3
BCR191S
BCR191T
BCR191W
SEMB1
Symbol
V
CEO
V
CBO
V
EBO
V
i(on)
I
C
P
tot
T
j
T
stg
Symbol
R
thJS
Value
50
50
10
30
100
200
250
250
250
250
250
250
150
150 ... -65
Value
≤
240
≤
90
≤
60
≤
140
≤
165
≤
105
≤
300
1For
calculation of
R
thJA
please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
Unit
K/W
2
May-18-2004
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