VT2080C-E3-4W View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
VT2080C-E3-4W Datasheet PDF : 5 Pages
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New Product
VT2080C, VFT2080C, VBT2080C, VIT2080C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage
per diode
Reverse current per diode
IR = 1.0 mA
IF = 5 A
IF = 10 A
IF = 5 A
IF = 10 A
VR = 80 V
TA = 25 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VBR
VF (1)
IR (2)
80 (minimum)
0.57
0.67
0.52
0.60
20
10
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
MAX.
-
-
0.81
-
0.70
600
20
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL VT2080C VFT2080C
per diode
3.0
6.0
Typical thermal resistance
RθJC
per device
2.0
5.0
VBT2080C
3.0
2.0
VIT2080C
3.0
2.0
UNIT
V
V
µA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
VT2080C-E3/4W
1.88
ITO-220AB
VFT2080C-E3/4W
1.73
TO-263AB
VBT2080C-E3/4W
1.36
TO-263AB
VBT2080C-E3/8W
1.36
TO-262AA
VIT2080C-E3/4W
1.44
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
24
Resistive or Inductive Load
20
V(B,I)T2080C
16
VFT2080C
12
8
4
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
8
D = 0.5 D = 0.8
7
D = 0.3
6
D = 0.2
5
D = 0.1
D = 1.0
4
3
T
2
1
D = tp/T
tp
0
0
2
4
6
8
10
12
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89166
Revision: 08-Sep-09
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