BDW74 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
BDW74 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDW74/A/B/C/D
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
BDW74
CONDITIONS
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BDW74A
BDW74B IC= -30mA; IB= 0
BDW74C
BDW74D
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB=B -12mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -8A; IB=B -80mA
VBE(on)
VECF
Base-Emitter On Voltage
C-E Diode Forward Voltage
IC= -3A; VCE= -3V
IF= -8A
BDW74
VCE= -30V; IB=B 0
BDW74A VCE= -30V; IB=B 0
ICEO
Collector Cutoff Current BDW74B VCE= -40V; IB=B 0
BDW74C VCE= -50V; IB=B 0
BDW74D VCE= -60V; IB=B 0
BDW74
VCB= -45V; IE= 0
VCB= -45V; IE= 0; TJ= 150℃
BDW74A
VCB= -60V; IE= 0
VCB= -60V; IE= 0; TJ= 150℃
ICBO
Collector Cutoff Current BDW74B
VCB= -80V; IE= 0
VCB= -80V; IE= 0; TJ= 150℃
BDW74C
VCB= -100V; IE= 0
VCB= -100V; IE= 0; TJ= 150℃
BDW74D
VCB= -120V; IE= 0
VCB= -120V; IE= 0; TJ= 150℃
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -3A; VCE= -3V
hFE-2
DC Current Gain
IC= -8A; VCE= -3V
Switching times
ton
Turn-on Time
toff
Turn-off Time
IC= -3A; IB1= -IB2= -12mA;
VBE(off)= 3.5V, RL=10Ω
MIN TYP.
-45
MAX
UNIT
-60
-80
V
-100
-120
-2.5
V
-4.0
V
-2.5
V
-3.5
V
-0.5 mA
-0.2
-5.0
-0.2
-5.0
-0.2
-5.0
mA
-0.2
-5.0
-0.2
-5.0
-2.0 mA
750
20000
100
1.0
μs
5.0
μs
isc Website：www.iscsemi.cn
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