KMZ51 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
KMZ51 Datasheet PDF : 8 Pages
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Philips Semiconductors
Magnetic field sensor
Product specification
KMZ51
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
VALUE
155
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VCC
bridge supply voltage
Hy
operating range in sensitive direction
Hx
operating range perpendicular to
sensitive direction
S
sensitivity
CONDITIONS
open circuit
TCS
TCVO
Rbridge
TCRbridge
Voffset
TCVoffset
temperature coefficient of sensitivity
temperature coefficient of output voltage
bridge resistance
Ts = −25 to +125 °C
VCC = 5 V;
Tamb = −25 to +125 °C
ICC 3 mA;
Tamb = −25 to +125 °C
resistance pins 2 to 3
temperature coefficient of bridge
resistance
Tbridge = −25 to +125 °C
offset voltage
temperature coefficient of offset voltage Tbridge = −25 to +125 °C
FH
Rcomp
Acomp
Rflip
TCRflip
Iflip
tflip
Risol
Visol
f
hysteresis of output voltage
resistance of compensation coil
field factor of compensation coil
resistance pins 4 to 5
resistance of set/reset conductor
temperature coefficient of resistance of
set/reset coil
recommended flipping current for stable
operation
flip pulse duration
isolating resistance
voltage between isolated systems
operating frequency
resistance pins 1 to 8
Tflip = −25 to +125 °C
resistance pins 1 to 2,
1 to 4 and 2 to 4
voltage pins 1 to 2, 1 to 4
and 2 to 4
MIN.
−
−0.2
−0.2
12
−
−
−
1
−
−1.5
−3
−
100
19
1
−
±800
1
1
−
0
TYP.
5
−
−
MAX. UNIT
8
V
+0.2 kA/m
+0.2 kA/m
16
−
0.31 −
−0.4 −
m-k---A--V--/--/m-V---
%/K
%/K
−0.1 −
%/K
−
3
kΩ
0.3 −
%/K
0
+1.5 mV/V
0
+3
µ----V-K---/--V---
−
2
%FS
170 300 Ω
22
25
A-m----/-mA----
2
3
Ω
0.39 −
%/K
±1000 ±1200 mA
3
100 µs
−
−
mΩ
−
50
V
−
1
MHz
2000 Jun 13
4
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