D44C6 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
D44C6 Datasheet PDF : 3 Pages
| |||
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEsa,
Collector-emitter
saturation voltage
D44C2, 3,5,6,8,9,11, 12
D44C1,4,7,10
lc=1A;lB=50mA
IC=1A;IB=0.1A
VeEsat Base-emitter saturation voltage
IC=1A;IB=0.1A
ICES
Collector cut-off current
VCE=Rated VCEs;
IEBO
Emitter cut-off current
D44C3,6,9,12
VEB=5V; lc=0
hpE-1
DC current gain
D44C2, 5,8,11
lc=0.2A;VCE=1V
D44C1,4,7,10
hFE-2
DC current gain
D44C1,4,7,10
lc=1A;VCE=1V
D44C2,3,5,6,8,9,11, 12 lc=2A;VCE=1V
fr
Transition frequency
lc=20mA;VCE=4V;
f=1.0MHz
Switching times
tr
Rise time
ts
Storage time
tf
Fall time
lc=1.0A;VCC=20V
IB1=-IB2=0.1A
D44C Series
MIN TYP. MAX UNIT
0.5
V
1.3
V
100
MA
10
MA
40
120
100
220
25
10
20
50
MHz
0.3
MS
0.7
MS
0.4
us
Share Link: 