Diode Semiconductor Korea
Surface Mount Fast Switching Diodes
MMBD4448DW
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX
Reverse breakdown voltage V(BR)R
Forward voltage
VF
Reverse current
IR
Total Capacitance
CT
Reverse Recovery time
trr
IR=10μA
IF=5.0mA
IF=10mA
IF=50mA
IF=150mA
VR=75V
VR=75V,Tj=150℃
VR=25V,Tj=150℃
VR=20V
VCB=10V,f=1.0MHz,IE=0
IF=IR=10mA,Irr=0.1*IR,RL=100Ω
75
0.62
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
0.720
0.855
1.0
1.25
2.5
50
30
25
4.0
4.0
UNIT
V
V
μA
μA
μA
nA
pF
ns
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