MRF839F View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
MRF839F Datasheet PDF : 1 Pages
| |||
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
(Jna.
MRF839
MRF839F
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
3 W 806-960 MHz
RF POWER
TRANSISTORS
COMMON-EMITTER
NPN SIUCON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Current — Continuous
j Operating Junction Temperature
Total Device Dissipation KI TC HOC
j Derate above 110 C
Symbol
VCEO
VCBO
VEBO
ic
Tj
PD
Value
16
36
3.5
0.6
200
10
111
j Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Tstg
65to • 150
Symbol
Max
Thermal Resistance. Junction to Case
R»JC
9
ELECTRICAL CHARACTERISTICS (Tc - 25 C unless otherwise noted.!
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Ig 5 mAdc, Ig 01
Collector-Emitter Breakdown Voltage dc 5 mAdc, Vgg - 01
Emitter-Base Breakdown Voltage (If 0.1 mAdc. Ic ~ 01
Collector Cutoff Current (VcE ' 15 Vdc, VBE
ON CHARACTERISTICS
0. TC
25°C)
VIBRICEO
V(BRICES
V(BR)EBO
ICES
DC Current Gain (Ic - 100 mAdc. VCE = 5 Vdcl
"FE
DYNAMIC CHARACTERISTICS
Output Capacitance I VCB - 15 Vdc, IE --- 0. f 1 MHz)
Cob
FUNCTIONAL TESTS (FIGURE 1)
Common-Emitter Amplifier Power Gain
GPE
IPOU, - 3 W. VCC - 12-5 Vdc. f - 870 MHzl
Collector Efficiency IPout - 3 W. Vcc - 12.5 Vdc. f = 870 MHzl
1C
Load Mismatch Stress
—
IVCc - 15.5 Vdc. Pin - 0.5 W, f = 870 MHz.
VSWR = 20:1. all phase anglesl
Unit
Vdc
Vdc
Vdc
Adc
•c
Watts
W/°C
'C
MRF839
Unit
°C/W
MRF839F
Typ
Max
Unit
16
-
-
Vdc
36
—
—
Vdc
3.5
-
-
Vdc
_
—
1
mAdc
10
90
150
6.5
10
8
10
—
dB
55
63
—
%
No Degradation in Output Power
Quality Semi-Conductors
Share Link: 