APTM100AM90FG View Datasheet(PDF) - Microsemi Corporation
Part Name
Description
Manufacturer
APTM100AM90FG Datasheet PDF : 6 Pages
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APTM100AM90FG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS Zero Gate Voltage Drain Current
RDS(on)
VGS(th)
IGSS
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 1000V Tj = 25°C
VGS = 0V,VDS = 800V Tj = 125°C
VGS = 10V, ID = 39A
VGS = VDS, ID = 10mA
3
VGS = ±30 V, VDS = 0V
400 µA
2000
90 105 mΩ
5V
±250 nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 500V
ID = 78A
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ID = 78A
RG =1.2Ω
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 78A, RG = 1.2Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 78A, RG = 1.2Ω
Min Typ Max Unit
20.7
3.5
nF
0.64
744
96
nC
488
18
12
ns
155
40
3.6
mJ
2.5
5.7
mJ
3.1
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
IS Continuous Source current
(Body diode)
Tc = 25°C
Tc = 80°C
VSD Diode Forward Voltage
dv/dt Peak Diode Recovery X
VGS = 0V, IS = - 78A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = - 78A
VR = 670V
diS/dt = 400A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
X dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 78A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C
Min Typ Max Unit
78
59
A
1.3 V
18 V/ns
320
ns
650
14.4
µC
38.9
www.microsemi.com
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