APTM100AM90FG View Datasheet(PDF) - Microsemi Corporation
Part Name
Description
Manufacturer
APTM100AM90FG Datasheet PDF : 6 Pages
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APTM100AM90FG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.12
0.1
0.9
0.08
0.7
0.06
0.5
0.04
0.3
0.02
0.1
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
240
VGS=15, 10&8V
7V
200
160
6.5V
120
6V
80
5.5V
40
5V
0
0 5 10 15 20 25 30
VDS, Drain to Source Voltage (V)
RDS(on) vs Drain Current
1.4
Normalized to
1.3 VGS=10V @ 39A
1.2
VGS=10V
1.1
1
VGS=20V
0.9
0.8
0
40 80 120 160 200 240
ID, Drain Current (A)
Transfert Characteristics
320
280
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
240
200
160
120
80
TJ=25°C
40
TJ=125°C
0
TJ=-55°C
0123456789
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
80
70
60
50
40
30
20
10
0
25 50 75 100 125 150
TC, Case Temperature (°C)
www.microsemi.com
4–6
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