APTM100AM90FG View Datasheet(PDF) - Microsemi Corporation
Part Name
Description
Manufacturer
APTM100AM90FG Datasheet PDF : 6 Pages
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Delay Times vs Current
200
160
td(off)
120
VDS=670V
RG=1.2Ω
80
TJ=125°C
L=100µH
40
td(on)
0
20 40 60 80 100 120 140 160
ID, Drain Current (A)
Switching Energy vs Current
10
VDS=670V
8 RG=1.2Ω
TJ=125°C
6 L=100µH
Eon
Eoff
4
2
0
20 40 60 80 100 120 140 160
ID, Drain Current (A)
Operating Frequency vs Drain Current
250
ZVS
200
ZCS
150
100 VDS=670V
D=50%
RG=1.2Ω
50 TJ=125°C
TC=75°C
Hard
switching
0
0 10 20 30 40 50 60 70
ID, Drain Current (A)
APTM100AM90FG
Rise and Fall times vs Current
80
VDS=670V
RG=1.2Ω
tf
60 TJ=125°C
L=100µH
40
tr
20
0
20 40 60 80 100 120 140 160
ID, Drain Current (A)
Switching Energy vs Gate Resistance
14
VDS=670V
12
ID=78A
Eoff
10
TJ=125°C
L=100µH
8
6
Eon
4
Eoff
2
0
0
2
4
6
8
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
1000
100
TJ=150°C
TJ=25°C
10
1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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