APTM100DA18TG View Datasheet(PDF) - Microsemi Corporation
Part Name
Description
Manufacturer
APTM100DA18TG Datasheet PDF : 6 Pages
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APTM100DA18TG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS Zero Gate Voltage Drain Current
RDS(on)
VGS(th)
IGSS
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 1000V Tj = 25°C
VGS = 0V,VDS = 800V Tj = 125°C
VGS = 10V, ID = 21.5A
VGS = VDS, ID = 5mA
3
VGS = ±30 V, VDS = 0V
200 µA
1000
180 210 mΩ
5V
±150 nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 500V
ID = 43A
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ID = 43A
RG = 2.5Ω
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 43A, RG = 2.5Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 43A, RG = 2.5Ω
Min Typ Max Unit
10.4
1.76
nF
0.32
372
48
nC
244
18
12
ns
155
40
1800
µJ
1246
2846
µJ
1558
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
VF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
VR=1000V
IF = 60A
IF = 120A
IF = 60A
1000
V
Tj = 25°C
Tj = 125°C
250
500
µA
Tc = 100°C
60
A
1.9 2.5
2.2
V
Tj = 125°C
1.7
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Tj = 25°C
280
IF = 60A
VR = 670V
Tj = 125°C
350
ns
di/dt = 200A/µs Tj = 25°C
760
nC
Tj = 125°C
3600
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