APTM100DA18TG View Datasheet(PDF) - Microsemi Corporation
Part Name
Description
Manufacturer
APTM100DA18TG Datasheet PDF : 6 Pages
| |||
Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Ciss
10000
1000
Coss
Crss
100
0 10 20 30 40 50
VDS, Drain to Source Voltage (V)
APTM100DA18TG
ON resistance vs Temperature
2.5
VGS=10V
2.0 ID=21.5A
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
1000
Maximum Safe Operating Area
100 limited by RDSon
100µs
1ms
10
1
1
Single pulse
TJ=150°C
TC=25°C
10ms
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
12
ID=43A
TJ=25°C
10
VDS=200V
VDS=500V
8
VDS=800V
6
4
2
0
0 100 200 300 400 500
Gate Charge (nC)
www.microsemi.com
5–6
Share Link: 