APTM100DA18TG View Datasheet(PDF) - Microsemi Corporation
Part Name
Description
Manufacturer
APTM100DA18TG Datasheet PDF : 6 Pages
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Delay Times vs Current
200
160
td(off)
120
VDS=670V
RG=2.5Ω
80
TJ=125°C
L=100µH
40
td(on)
0
10
30
50
70
90
ID, Drain Current (A)
Switching Energy vs Current
5
VDS=670V
4 RG=2.5Ω
TJ=125°C
L=100µH
3
Eon
Eof f
2
1
0
10
30
50
70
90
ID, Drain Current (A)
Operating Frequency vs Drain Current
250
200
ZVS
ZCS
150
100
VDS=670V
D=50%
RG=2.5Ω
50 TJ=125°C
Hard
Tc=75°C switching
0
10 15 20 25 30 35 40
ID, Drain Current (A)
APTM100DA18TG
Rise and Fall times vs Current
80
VDS=670V
RG=2.5Ω
tf
60 TJ=125°C
L=100µH
40
tr
20
0
10
30
50
70
90
ID, Drain Current (A)
Switching Energy vs Gate Resistance
7
VDS=670V
6 ID=43A
Eoff
5 TJ=125°C
L=100µH
4
Eon
3
2
1
Eoff
0
0
5
10
15
20
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
1000
100
TJ=150°C
TJ=25°C
10
1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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